GaNPower International Inc. is proud to announce the release of a new high performance 1200V GaN power switching device (product code GPIHV30DDP5L). In a TO263-5 package, the 60 mOhm/30A device features Kevin source lead and small input capacitance. With unique proprietary design the new device can switch 10 times faster (or 1/10th of input capacitance) than its SiC counterparts. Engineering samples...
Read MoreGaNPower International Inc. is pleased to announce that it has successfully designed its first GaN FET monolithically integrated with a gate driver. The power IC is rated at 650V with nominal resistance of 0.18mOhm. Engineering samples are now available in package of SOP8 (5x8) and the same IC is being transferred to DFN5x6 for better thermal performance. Some brief...
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[vc_row][vc_column][vc_column_text]Ganpower International (GPI) is pleased to announce a major technical breakthrough: the successful design and tapeout of a power GaN device monolithically integrated with a gate over-voltage protection (patent-pending) circuit. The integrated GaN power device includes an IC module with functionality of over-voltage protection and level shifting and it shall be named OVP-GaN (or over-voltage protected GaN).[/vc_column_text][vc_empty_space height="30px"][qodef_blockquote text="We believe the invention holds the key...
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Lorem ipsum dolor sit amet, consectetuer adipiscing elit, sed diam nonummy nibh euismod tincidunt ut laoreet dolore magna aliquam erat volutpat. Ut wisi enim ad minim veniam, quis nostrud exerci tation ullamcorper suscipit lobortis nisl ut aliquip ex ea commodo consequat. Duis autem vel eum iriure dolor in hendrerit in vulputate velit esse molestie consequat, vel illum dolore eu feugiat nulla facilisis at vero eros...
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