GaNPower is pleased to anounce that we will attend this year’s Applied Power Electronics Conference (APEC 20) to be held in New Orleans, LA. Applied Power Electronics Conference is held every year in difference cities in the US and it draws thousands of experts in power electronics from all over the world. We would like to take this opportunity to meet old and new friends, so come...
Read MoreGaNPower International is pleased to announce joining the JEDEC JC-70 Committee starting from 2020. By joining JEDEC, GaNPower International determines to follow JEDEC reliability and qualification procedures for its discrete devices and GaNPowerICTM as well as to help develop further standards for GaN power semiconductors. About GaNPower International GanPower International Inc. is a Canadian federal corporation based in Vancouver, Canada with a focus on developing...
Read MoreGaNPower International is pleased to announce the release of two new GaNPower IC (GPI8HINOIC and GPI8HIRGIC) that were specially designed for high-side power switches in a half-bridge application. Using edge-triggered narrow pulses as input signal, these two IC enables the use of small and inexpensive transformer for isolation and level shifting for the high side switch. Such GaNPower IC eliminate the major cost of...
Read MoreGaNPower International Inc. will be attending 2019 IEEE Energy Conversion Congress & Expo, Baltimore, Sept. 29-Oct.3. We will showcase new products such as new 1200V GaNFET, 650V All-GaN Power IC as well as new Silicon driver-GaN co-packaged IC. Please come visit us at booth 314. About GaNPower International Inc. GanPower International Inc. is a Canadian federal corporation based in Vancouver, Canada with a focus on...
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GaNPower International Inc. is proud to announce the release of a new high performance 1200V GaN power switching device (product code GPIHV30DDP5L). In a TO263-5 package, the 60 mOhm/30A device features Kevin source lead and small input capacitance. With unique proprietary design the new device can switch 10 times faster (or 1/10th of input capacitance) than its SiC counterparts. Engineering samples...
Read MoreGaNPower International Inc. is pleased to announce that it has successfully designed its first GaN FET monolithically integrated with a gate driver. The power IC is rated at 650V with nominal resistance of 0.18mOhm. Engineering samples are now available in package of SOP8 (5x8) and the same IC is being transferred to DFN5x6 for better thermal performance. Some brief...
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[vc_row][vc_column][vc_column_text]Ganpower International (GPI) is pleased to announce a major technical breakthrough: the successful design and tapeout of a power GaN device monolithically integrated with a gate over-voltage protection (patent-pending) circuit. The integrated GaN power device includes an IC module with functionality of over-voltage protection and level shifting and it shall be named OVP-GaN (or over-voltage protected GaN).[/vc_column_text][vc_empty_space height="30px"][qodef_blockquote text="We believe the invention holds the key...
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Lorem ipsum dolor sit amet, consectetuer adipiscing elit, sed diam nonummy nibh euismod tincidunt ut laoreet dolore magna aliquam erat volutpat. Ut wisi enim ad minim veniam, quis nostrud exerci tation ullamcorper suscipit lobortis nisl ut aliquip ex ea commodo consequat. Duis autem vel eum iriure dolor in hendrerit in vulputate velit esse molestie consequat, vel illum dolore eu feugiat nulla facilisis at vero eros...
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