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GaNPower Demonstrates Industry’s First 1200 V Single-Die E-Mode GaN Power Devices

GaNPower Demonstrates Industry’s First 1200 V Single-Die E-Mode GaN Power Devices

New 1200V GaNFET Power Switching Capability Demonstrated at 800V

Sept., 2021— GaN Power International, an industry leader in gallium nitride (GaN) device technology and GaN based power electronics systems, has achieved an important milestone in the development of high-voltage GaN power devices. After introducing its first lateral EMODE GaN power transistor in 2018(*), it has recently demonstrated the power switching capability in a double pulse testing board at 800V and around 7-8 ampere for its 1200V GaNFET  GPIHV30DFN and GPIHV30SB5L, devices packaged in DFN and TO263-5 format, respectively.  Its implication is that these devices are suitable for constructing power converters used in EV on-board chargers and EV motor drivers.   Such automotive systems operate at a DC bus voltage of around 700-800V, requiring power switches rated at 1200V.  Currently a popular solution would be to use 1200V SiC switches as pioneered by Tesla.    1200V GaN has a switching figure of merit (smaller the better) of about 500 mOnC which is about 1/10 of most SiC devices on the market.  Since GaN/Silicon (6 inch or 8 inch silicon) is in mass production and GaNFET price is decreasing fast due to its successful use in power delivery/mobile quick chargers, the potential of 1200V GaNFET replacing SiC MOSFET in automotive application seems increasing likely.

(*) relevant US patents: US 10,388,743B2; US 10,615,094B2; US 10,892,254B2; US11,107,755B2

Availability

GaNPower International is offering engineering samples of its 1200V EMODE GaN FETs,  GPIHV30SB5L in the TO263-5 (65mOhm) package, and GPIHV30DFN (65mOhm) in DFN package to selected customers. Sample requests may be directed to information@iganpower.com.

About GanPower International Inc.

GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.

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GaNPower International
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