New AppNote of High Voltage GaN for Smart Utility Meters Released at APEC22 Conference

GaNPower International (GPI) is pleased to attend the exhibition (Booth 1839) at the Applied Power Electronics Conference (APEC) March 20-24, Houston, TX.
We would like to take the opportunity of the APEC22 to release a new appnote of high voltage GaN for smart utility meters.
As pioneer in high voltage single die emode GaNFET, GPI is pleased to report greater than 90 percent power efficiency for application of smart utility meters.

We developed a highly efficient (89%-95%) auxiliary power supply demo PCBA, which can provide a stable 5-12 V output voltage and 15-36 W output power over a wide input range from 250 VDC to 1200 VDC. With an efficient diode bridge, our design can be used to power various high-voltage utility meters with three-phase 200-800VAC input at very low power loss.

Our EVB uses a primary quasi-resonant flyback controller, a secondary synchronous rectification controller, and the GaNPower GPIHV15DFN 1200V GaN HEMT. With ultra-low gate charge (4 nC) and low on state resistance (100 mO) of GPI GaN HEMT, the switching losses are significantly reduced, and the board exhibits a superior efficiency for the application up to 95%.

About GanPower International Inc.

GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.