Currently GaNPower’s GaN HEMT devices can be purchased by contacting us at information@iganpower.com.
The short answer is no. GaN HEMT power devices are far superior than the best silicon devices such as super junction MOSFETs. However, due to different requirements of gate driving voltage and extremely high dv/dt slew rate, special drivers and optimized PCB layouts are recommended to minimize the impact from circuit parasitics. Some packaging forms such as GaNPower’s DFN packaged devices offer both sense and force for the source terminal. Also, for traditional TO220 packages, please be advised that the pins are arranged as Gate – Source -Drain, and the thernal pad is connected to the source instead of drain.
GaN power HEMTs have been tested by numerous vendors, users and testing facilities to be as reliable (if not better than) silicon counterparts.
Currently GaN power HEMT devices are most suitable for low to medium voltage (<900V) and power (<20KW) applications. GaN is the ideal choice for high frequency applications. SiC devices are better choice for high voltage (>900V) and high power applications (>20KW).
GaN devices are different from silicon MOSFET or IGBT in that they have no inherent PN junction diodes that cause reverse recovery issue. User do not need to parallel an FRD for the purpose of suppressing the body diode reverse recovery effect, since GaN HEMT can operate in both first and third quadrants. However, care should be taken for the dead time power loss since the Vsd voltage of GaN HEMT is usually close to 2V. This is especially true when a negative gate voltage is applied.
