August 2018

23 Aug

Half-bridge evaluation board

GaNPower’s half-bridge evaluation board GPIEVBOPT uses separate isolated optocoupler and auxiliary DC power supply for both high and low sides. It enables users of GaNFET to investigate the optimal driving parameters without the worry of bootstrap circuit interfering with high side driving. The EVB can be conveniently converted to double pulse testing board and it is designed to withstand a maximum bus voltage of 1000V....

02 Aug

A major breakthrough: 1200V E-Mode GaN HEMTs

by admin

in Trends

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