Author: admin

GaNPower is pleased to announce the successful demonstration of parallelization capability of Bluesky120 (bare die of EMODE GaNFET/IC with rating of 900V/120A/12mOhm) packaged in a TO247-4.Driving conditions are compatible with conventional driving voltages. At Vbus-400V, a maximum of 335A switching current has been achieved with driving voltage -1V to 12V (see example waveform here). About GanPower International Inc. GanPower is a Vancouver, Canada based private company with...

We are pleased to offer a new bare die at 900V 120A/12 mOhm rating. Full chip probe has been performed and results have been included. Details can be found here. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group...

In August this year, GaNPower introduced a new generation of high-voltage GaN devices with rated operating conditions of 1200V/20A (70mΩ) and an output current exceeding 20A at a gate voltage of 12V. This performance improvement makes GaNPower's GaN devices comparable to silicon carbide (SiC) devices of the same specifications in terms of operating performance. Details can be found here. About GanPower International Inc. GanPower International Inc. is...

GaNPower recently released its 60A and 120A bare die series [link_to_product_page] GaNFET and GaN-IC at a voltage rating of 650V/900V, which includes options to drive the Emode GaNFET at the original gate voltage of 6V [G0(6V)] or 12/15V [G1(15V)].  Please see here for the details. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing...

We are pleased to announce the release of an upgraded version of EMODE GaNFET (GP65R45T4) which features an enhanced gate turn-on voltage (4V) and increased gate driving range (+/-20V). Using All-GaN-IC technology, the new device makes it easy to replace exising SJ MOFET and SiC in a pin-to-pin manner. For details, please see the following app note. About GanPower International Inc. GanPower International Inc. is a privately...

1200V GaNFET GaNPower recently demonstrates good dynamic switching performance for a wide temperature range and voltage range 25-125C, from Vbus=100-1200V, at a switching current of 20A. Details are here. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of...

We at GaNPower are pleased to announce the release of a new class of engineering samples of high voltage (nominal 650V and 1200V) GaN power switches based on the TO247-4 package. Up to a maximum rated current of 120A (12 mOhm), some of these switches include driver IC intended to be driven by digital signal while others include a monolithically integrated input regulator circuit*. The...

We are pleased to announce that Ganpower International Inc.’s proposal for the IRAP project titled “GSense Lossless in-line current sensing for all-GaN-IC Intelligent Power Modules” has been approved for support under the National Research Council Canada’s Industrial Research Assistance Program (NRC IRAP). About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride...

GaNPower is pleased to inform that after rigorous qualification procedures its GaNFETs are being used in various types of PD quick chargers for Samsung smartphones. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that...