High Voltage Monolithic GaN Power IC Released

GaNPower International Inc. is pleased to announce that
it has successfully designed its first GaN FET monolithically
integrated with a gate driver. The power IC is rated at 650V with
nominal resistance of 0.18mOhm. Engineering samples are now available
in package of SOP8 (5×8) and the same IC is being transferred to DFN5x6
for better thermal performance. Some brief data can be found here.

About GaNPower International Inc.

GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.