Successful Design of High-side GaNPower IC

GaNPower International is pleased to announce the release of two new GaNPower IC (GPI8HINOIC and GPI8HIRGIC) that were specially designed for high-side power switches in a half-bridge application. Using edge-triggered narrow pulses as input signal, these two IC enables the use of small and inexpensive transformer for isolation and level shifting for the high side switch. Such GaNPower IC eliminate the major cost of using commercially available half-bridge driver. Using proprietary IC design, the GPI8HIRGIC contains an all-GaN regulator circuit that allows for wider range of auxiliary DC power supply (Vcc) from 6-15V. We are offering limited engineering samples to selected customers at this time.

About GaNPower International Inc.

GanPower International Inc. is a Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. As a fabless design company it has various subsidiaries and well established manufacturing partners around the world. Its founders and management team believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.