1200V GaNFET in DFN8x8 Package

GaNPower International Inc. is pleased to announce the release of 1200V EMODE single-die GaNFET in its first DFN8x8 format at the engineering sampling stage. The new product (code GPIHV30DFN) features low Qg*Rds at 65mOhm turn-on resistance. With a S-D creepage of 2.8mm, it is suitable for switching at about 800V, leaving sufficient safety margin for BV. More details are available on datasheet.

About GaNPower International

GanPower International Inc. is a Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. As a fabless design company it has various subsidiaries and well established manufacturing partners around the world. Its founders and management team believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.