GaNPower News

In August this year, GaNPower introduced a new generation of high-voltage GaN devices with rated operating conditions of 1200V/20A (70mΩ) and an output current exceeding 20A at a gate voltage of 12V. This performance improvement makes GaNPower's GaN devices comparable to silicon carbide (SiC) devices of the same specifications in terms of operating performance. Details can be found here. About GanPower International Inc. GanPower International Inc. is...

GaNPower recently released its 60A and 120A bare die series [link_to_product_page] GaNFET and GaN-IC at a voltage rating of 650V/900V, which includes options to drive the Emode GaNFET at the original gate voltage of 6V [G0(6V)] or 12/15V [G1(15V)].  Please see here for the details. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing...

We are pleased to announce the release of an upgraded version of EMODE GaNFET (GP65R45T4) which features an enhanced gate turn-on voltage (4V) and increased gate driving range (+/-20V). Using All-GaN-IC technology, the new device makes it easy to replace exising SJ MOFET and SiC in a pin-to-pin manner. For details, please see the following app note. About GanPower International Inc. GanPower International Inc. is a privately...

1200V GaNFET GaNPower recently demonstrates good dynamic switching performance for a wide temperature range and voltage range 25-125C, from Vbus=100-1200V, at a switching current of 20A. Details are here. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of...

We at GaNPower are pleased to announce the release of a new class of engineering samples of high voltage (nominal 650V and 1200V) GaN power switches based on the TO247-4 package. Up to a maximum rated current of 120A (12 mOhm), some of these switches include driver IC intended to be driven by digital signal while others include a monolithically integrated input regulator circuit*. The...

We are pleased to announce that Ganpower International Inc.’s proposal for the IRAP project titled “GSense Lossless in-line current sensing for all-GaN-IC Intelligent Power Modules” has been approved for support under the National Research Council Canada’s Industrial Research Assistance Program (NRC IRAP). About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride...

GaNPower is pleased to inform that after rigorous qualification procedures its GaNFETs are being used in various types of PD quick chargers for Samsung smartphones. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that...

GaNPower is pleased to release GaN power switch with an integrated lossless current sensing element. With unique all-GaN-IC based current sensing technology, both positive and negative current sensing can be achieved. The device may be regarded as a discrete FET with integrated sensing circuit, or be regarded as belonging to the family of GaN-IC with monolithic subcircuit integration. The power switch is packaged in DFN8x8...

GaNPower is pleased to inform that after disruption for a period of three years due to fab capacity issues, we are able to restock the hiside GaN-IC. Our hiside IC used edge trigger method and a pair of signal transformers to offer easy level shifting when using monolithic GaN-IC. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada...

GaNPower is pleased to announce the availability of a new evaluation board of 5kW 3-phase inverter power stage. The inverter will be showcased at 2023 APEC in Orlando. Please come visit us at APEC exhibition. ...

GaNPower International (GPI) is pleased to announce the release of a new GaNPowerIC: GPIRG15DFV. Rated at 85mOhm/900V, this all-GaN IC is suitable for 400V or 600V DC bus power switching.This power IC monolithically integrates a fast GaN based driver with an easy-to-use regulated PWM input and auxiliary power supply. Common Emode GaNFET or IC is known to have the disadvantage of small gate voltage (6-7V)...

GaNPower International is pleased to announce the release of two kinds of engineering GaN-IC at 900V and Rdson 85mOhm. They are suitable for DC bus ranging from 400-600V power switching operation.They offer lower dynamic Rdson than discrete GaNFET and untra-low quiescent leakage current. The IC markings are GPI4TIC15DFV and GPI6TIC15DFV. Details can be found in the product page. About GanPower International Inc. GanPower International Inc. is a...

We are pleased to release the latest app note on 3-phase utility meter power using GaNPower 1200V GaNFET. Details Can be found Here. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable...

GaNPower International (GPI) is pleased to attend the exhibition (Booth 1839) at the Applied Power Electronics Conference (APEC) March 20-24, Houston, TX.We would like to take the opportunity of the APEC22 to release a new appnote of high voltage GaN for smart utility meters.As pioneer in high voltage single die emode GaNFET, GPI is pleased to report greater than 90 percent power efficiency for application...

New 1200V GaNFET Power Switching Capability Demonstrated at 800V Sept., 2021— GaN Power International, an industry leader in gallium nitride (GaN) device technology and GaN based power electronics systems, has achieved an important milestone in the development of high-voltage GaN power devices. After introducing its first lateral EMODE GaN power transistor in 2018(*), it has recently demonstrated the power switching capability in a double pulse testing...

We at GaNPower Intl are pleased to announce that our US patent application entitled "Packaging for Lateral High Voltage GaN Power Devices," has been allowed by the US Patent Office. The patent allowance encourages us to further qualify and market our unique single-die emode 1200V GaN as replacement for SiC at 1200V. The figure of merit Qq*Rdson for our 1200V GaN is about 10 times...

GaNPower International Inc. is pleased to announce its continued successin GaN technology innovation with a number of device and packagingrelated patents being allowed and/or issued by the US patent office.Details are available in the table here. ...

GaNPower International Inc. is pleased to announce the release of 1200V EMODE single-die GaNFET in its first DFN8x8 format at the engineering sampling stage. The new product (code GPIHV30DFN) features low Qg*Rds at 65mOhm turn-on resistance. With a S-D creepage of 2.8mm, it is suitable for switching at about 800V, leaving sufficient safety margin for BV. More details are available on...