We at GaNPower are pleased to announce the release of a new class of engineering samples of high voltage (nominal 650V and 1200V) GaN power switches based on the TO247-4 package. Up to a maximum rated current of 120A (12 mOhm), some of these switches include driver IC intended to be driven by digital signal while others include a monolithically integrated input regulator circuit*. The...
Read MoreWe are pleased to announce that Ganpower International Inc.’s proposal for the IRAP project titled “GSense Lossless in-line current sensing for all-GaN-IC Intelligent Power Modules” has been approved for support under the National Research Council Canada’s Industrial Research Assistance Program (NRC IRAP). About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride...
Read MoreGaNPower is pleased to inform that after rigorous qualification procedures its GaNFETs are being used in various types of PD quick chargers for Samsung smartphones. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that...
Read MoreGaNPower is pleased to release GaN power switch with an integrated lossless current sensing element. With unique all-GaN-IC based current sensing technology, both positive and negative current sensing can be achieved. The device may be regarded as a discrete FET with integrated sensing circuit, or be regarded as belonging to the family of GaN-IC with monolithic subcircuit integration. The power switch is packaged in DFN8x8...
Read MoreGaNPower is pleased to inform that after disruption for a period of three years due to fab capacity issues, we are able to restock the hiside GaN-IC. Our hiside IC used edge trigger method and a pair of signal transformers to offer easy level shifting when using monolithic GaN-IC. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada...
Read MoreGaNPower is pleased to announce the availability of a new evaluation board of 5kW 3-phase inverter power stage. The inverter will be showcased at 2023 APEC in Orlando. Please come visit us at APEC exhibition. ...
Read MoreGaNPower International (GPI) is pleased to announce the release of a new GaNPowerIC: GPIRG15DFV. Rated at 85mOhm/900V, this all-GaN IC is suitable for 400V or 600V DC bus power switching.This power IC monolithically integrates a fast GaN based driver with an easy-to-use regulated PWM input and auxiliary power supply. Common Emode GaNFET or IC is known to have the disadvantage of small gate voltage (6-7V)...
Read MoreGaNPower International is pleased to announce the release of two kinds of engineering GaN-IC at 900V and Rdson 85mOhm. They are suitable for DC bus ranging from 400-600V power switching operation.They offer lower dynamic Rdson than discrete GaNFET and untra-low quiescent leakage current. The IC markings are GPI4TIC15DFV and GPI6TIC15DFV. Details can be found in the product page. About GanPower International Inc. GanPower International Inc. is a...
Read More
Join the GaNPower experts in power electronics for the industrial markets at the in-person IEEE Energy Conversion Congress & Expo Huntington Place, Detroit, MI Oct 9-13, 2022 at booth #402. Subject matter experts will be presenting in Special Session 17 Room 142A/B at the conference, and our team will be available to discuss and demonstrate cutting edge technologies. Title: Monolithic integration of highside driver with GaN power switches Contributors: Simon Li(*),...
Read MoreWe are pleased to release the latest app note on 3-phase utility meter power using GaNPower 1200V GaNFET. Details Can be found Here. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable...
Read MoreGaNPower International (GPI) is pleased to attend the exhibition (Booth 1839) at the Applied Power Electronics Conference (APEC) March 20-24, Houston, TX.We would like to take the opportunity of the APEC22 to release a new appnote of high voltage GaN for smart utility meters.As pioneer in high voltage single die emode GaNFET, GPI is pleased to report greater than 90 percent power efficiency for application...
Read More
GaNPower International Inc. is pleased to release a half-bridge evaluation board GPIEVBHBOPT. GaNPower’s half-bridge evaluation board GPIEVBOPT uses separate isolated optocoupler and auxiliary DC power supply for both high and low sides. It enables users of GaNFET to investigate the optimal driving parameters without the worry of bootstrap circuit interfering with high side driving. The EVB can be conveniently converted to double pulse testing board and it...
Read MoreNew 1200V GaNFET Power Switching Capability Demonstrated at 800V Sept., 2021— GaN Power International, an industry leader in gallium nitride (GaN) device technology and GaN based power electronics systems, has achieved an important milestone in the development of high-voltage GaN power devices. After introducing its first lateral EMODE GaN power transistor in 2018(*), it has recently demonstrated the power switching capability in a double pulse testing...
Read MoreWe at GaNPower Intl are pleased to announce that our US patent application entitled "Packaging for Lateral High Voltage GaN Power Devices," has been allowed by the US Patent Office. The patent allowance encourages us to further qualify and market our unique single-die emode 1200V GaN as replacement for SiC at 1200V. The figure of merit Qq*Rdson for our 1200V GaN is about 10 times...
Read MoreGaNPower International Inc. is pleased to announce its continued successin GaN technology innovation with a number of device and packagingrelated patents being allowed and/or issued by the US patent office.Details are available in the table here. ...
Read MoreGaNPower International Inc. is pleased to announce the release of 1200V EMODE single-die GaNFET in its first DFN8x8 format at the engineering sampling stage. The new product (code GPIHV30DFN) features low Qg*Rds at 65mOhm turn-on resistance. With a S-D creepage of 2.8mm, it is suitable for switching at about 800V, leaving sufficient safety margin for BV. More details are available on...
Read More
GaNPower is pleased to anounce that we will attend this year’s Applied Power Electronics Conference (APEC 20) to be held in New Orleans, LA. Applied Power Electronics Conference is held every year in difference cities in the US and it draws thousands of experts in power electronics from all over the world. We would like to take this opportunity to meet old and new friends, so come...
Read MoreGaNPower International is pleased to announce joining the JEDEC JC-70 Committee starting from 2020. By joining JEDEC, GaNPower International determines to follow JEDEC reliability and qualification procedures for its discrete devices and GaNPowerICTM as well as to help develop further standards for GaN power semiconductors. About GaNPower International GanPower International Inc. is a Canadian federal corporation based in Vancouver, Canada with a focus on developing...
Read MoreGaNPower International is pleased to announce the release of two new GaNPower IC (GPI8HINOIC and GPI8HIRGIC) that were specially designed for high-side power switches in a half-bridge application. Using edge-triggered narrow pulses as input signal, these two IC enables the use of small and inexpensive transformer for isolation and level shifting for the high side switch. Such GaNPower IC eliminate the major cost of...
Read MoreGaNPower International Inc. will be attending 2019 IEEE Energy Conversion Congress & Expo, Baltimore, Sept. 29-Oct.3. We will showcase new products such as new 1200V GaNFET, 650V All-GaN Power IC as well as new Silicon driver-GaN co-packaged IC. Please come visit us at booth 314. About GaNPower International Inc. GanPower International Inc. is a Canadian federal corporation based in Vancouver, Canada with a focus on...
Read More