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July 2019

16 Jul

High Voltage Monolithic GaN Power IC Released

by admin
in Trends
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GaNPower International Inc. is pleased to announce that it has successfully designed its first GaN FET monolithically integrated with a gate driver. The power IC is rated at 650V with nominal resistance of 0.18mOhm. Engineering samples are now available in package of SOP8 (5x8) and the same IC is being transferred to DFN5x6 for better thermal performance. Some brief...

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Vision of GaNPower

Our Vision is to establish ourselves as an industry leader in GaN device technology and GaN based power electronics systems. By integrating and leveraging our strength in GaN HEMT power device design, controller and driver IC design as well as power electronics system design, we are creating a vertically integrated design value chain that enables us to deliver advanced products for our customers.

GaNPower International Inc.

GaNPower International Inc. is a federally registered company of Canada
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Tel : 604-336-0163

information@iganpower.com

230-3410 Lougheed Hwy, Vancouver, BC, Canada V5M 2A4

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