09
Sep
[vc_row][vc_column][vc_column_text]Ganpower International (GPI) is pleased to announce a major technical breakthrough: the successful design and tapeout of a power GaN device monolithically integrated with a gate over-voltage protection (patent-pending) circuit. The integrated GaN power device includes an IC module with functionality of over-voltage protection and level shifting and it shall be named OVP-GaN (or over-voltage protected GaN).[/vc_column_text][vc_empty_space height="30px"][qodef_blockquote text="We believe the invention holds the key...
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