25
Jul
We at GaNPower Intl are pleased to announce that our US patent application entitled "Packaging for Lateral High Voltage GaN Power Devices," has been allowed by the US Patent Office. The patent allowance encourages us to further qualify and market our unique single-die emode 1200V GaN as replacement for SiC at 1200V. The figure of merit Qq*Rdson for our 1200V GaN is about 10 times...
Read More