US patent supporting GaNPower’s 1200V GaN devices allowed

We at GaNPower Intl are pleased to announce that our US patent application entitled “Packaging for Lateral High Voltage GaN Power Devices,” has been allowed by the US Patent Office. The patent allowance encourages us to further qualify and market our unique single-die emode 1200V GaN as replacement for SiC at 1200V. The figure of merit Qq*Rdson for our 1200V GaN is about 10 times better than most SiC on the market while the cost of lateral GaNFET using GaN/Si technology are much cheaper.

About GaNPower International

GanPower International Inc. is a Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. As a fabless design company it has various subsidiaries and well established manufacturing partners around the world. Its founders and management team believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.