GaNPower is pleased to demonstrate (engineering stage) of 1200V/25mOhm/60A EMODE GaNFET power switch based on all-GaN-IC and smart packaging. Protected by multiple patents (some pending), the technology enables EMODE GaN/Si from 650V platform be transformed to 1200V and beyond. The GaN device shows good DC parameters and excellent dynamic switching behavior with small increase in dynamic RDSON up to 960V (see figure below). Packaged in TO247-4, its...

GaNPower is pleased to report that recent dynamic testing of its 900V/120A (12mOhm) power switch shows great promise against similar SiC for high power/current applications. A common parameter for application engineer to compare is the switching loss at turn off (Eoff).  A small  Eoff is a good indication of low switching loss without concern of Electromagnetic interference (EMI) in power systems.   In similar conditions of...