GaNPower International is pleased to inform that to continue our success in GaN power device design, our wafer fabrication has been transferred from TSMC to other well established foundries around the world, including Global Foundry....

GaNPower is pleased to demonstrate (engineering stage) of 1200V/25mOhm/60A EMODE GaNFET power switch based on all-GaN-IC and smart packaging. Protected by multiple patents (some pending), the technology enables EMODE GaN/Si from 650V platform be transformed to 1200V and beyond. The GaN device shows good DC parameters and excellent dynamic switching behavior with small increase in dynamic RDSON up to 960V (see figure below). Packaged in TO247-4, its...

GaNPower is pleased to report that recent dynamic testing of its 900V/120A (12mOhm) power switch shows great promise against similar SiC for high power/current applications. A common parameter for application engineer to compare is the switching loss at turn off (Eoff).  A small  Eoff is a good indication of low switching loss without concern of Electromagnetic interference (EMI) in power systems.   In similar conditions of...

by Tektronix Advanced Semiconductor Laboratory To more thoroughly assess the aging characteristics of power devices, high-temperature operating life (HTOL) tests have increasingly gained attention from power device test engineers. HTOL replicates the operational conditions of power devices by integrating them into actual power circuits. By subjecting devices to stress through continuous hard or soft switching circuits, HTOL delivers aging effects that closely mimic real-world usage, providing...

GaNPower is pleased to announce the release of an upgraded version of its 1200V emode GaN packaged as TO247-4. At a turn on voltage of Vgth=2.7, this GaN switch is suitable for gate driving range of -2 to 12 (max range -20 to 20). At 34 mOhm and maximum current rating of 40A, this product shows stable dynamic on-resistance above 800V. The upgraded current capability...

GaNPower is pleased to announce the successful demonstration of parallelization capability of Bluesky120 (bare die of EMODE GaNFET/IC with rating of 900V/120A/12mOhm) packaged in a TO247-4.Driving conditions are compatible with conventional driving voltages. At Vbus-400V, a maximum of 335A switching current has been achieved with driving voltage -1V to 12V (see example waveform here). About GanPower International Inc. GanPower is a Vancouver, Canada based private company with...

We are pleased to offer a new bare die at 900V 120A/12 mOhm rating. Full chip probe has been performed and results have been included. Details can be found here. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group...

In August this year, GaNPower introduced a new generation of high-voltage GaN devices with rated operating conditions of 1200V/20A (70mΩ) and an output current exceeding 20A at a gate voltage of 12V. This performance improvement makes GaNPower's GaN devices comparable to silicon carbide (SiC) devices of the same specifications in terms of operating performance. Details can be found here. About GanPower International Inc. GanPower International Inc. is...

GaNPower recently released its 60A and 120A bare die series [link_to_product_page] GaNFET and GaN-IC at a voltage rating of 650V/900V, which includes options to drive the Emode GaNFET at the original gate voltage of 6V [G0(6V)] or 12/15V [G1(15V)].  Please see here for the details. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing...

We are pleased to announce the release of an upgraded version of EMODE GaNFET (GP65R45T4) which features an enhanced gate turn-on voltage (4V) and increased gate driving range (+/-20V). Using All-GaN-IC technology, the new device makes it easy to replace exising SJ MOFET and SiC in a pin-to-pin manner. For details, please see the following app note. About GanPower International Inc. GanPower International Inc. is a privately...