16
Sep
In August this year, GaNPower introduced a new generation of high-voltage GaN devices with rated operating conditions of 1200V/20A (70mΩ) and an output current exceeding 20A at a gate voltage of 12V. This performance improvement makes GaNPower's GaN devices comparable to silicon carbide (SiC) devices of the same specifications in terms of operating performance. Details can be found here. About GanPower International Inc. GanPower International Inc. is...
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