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August 2020

GaNPower International Inc. is pleased to announce the release of 1200V EMODE single-die GaNFET in its first DFN8x8 format at the engineering sampling stage. The new product (code GPIHV30DFN) features low Qg*Rds at 65mOhm turn-on resistance. With a S-D creepage of 2.8mm, it is suitable for switching at about 800V, leaving sufficient safety margin for BV. More details are available on...

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