To get maximum performance enhancement, we cannot simply swap the old silicon power devices with new GaN HEMTs. Different driving strategy should be considered for GaN power devices.
Currently, the maximum gate drive voltage for GaNPower’s E-mode HEMT devices is 7V with recommended gate drive voltage of 6V. Special gate drivers should be used unless an integrated driver+HEMT device is used.
There are many commercially available drivers for both half-bridge and non-isolated low side applications:
GaN HEMT has very high switching speed, which inevitably brings ringing if parasitic inductance such as common source inductance is not properly suppressed. The best way to reduce the parasitics is to use either monolithically integrated driver with GaN devices or use silicon driver co-packaged with GaN HEMTs.
GaNPower International offers both monolithic integrated solution as well as silicon driver IC + GaN HEMT co-package. More information can be obtained in the product page.
