GaNPower releases TO247-4 based high current power switches
We at GaNPower are pleased to announce the release of a new class of engineering samples of high voltage (nominal 650V and 1200V) GaN power switches based on the TO247-4 package. Up to a maximum rated current of 120A (12 mOhm), some of these switches include driver IC intended to be driven by digital signal while others include a monolithically integrated input regulator circuit*. The ones with regulator are regarded as an upgraded discrete GaNFET such that their lead arrangement, input gate threshold voltage (Vgth=2.7V) and gate voltage driving range (Vg=-20V to 20V) match existing SiC MOSFET**. Such power switches are called P2P-GaN devices so that it can match existing SiC MOSFET in a pin to pin (P2P) fashion. Our initial double pulse test indicate that such 1200V TO247-4 devices can switch cleanly at half of its rated maximum current up to bus voltage of 1000V at up to 500kHz, making them suitable for application with bus voltage between 800-1000V. Potential customers are encouraged to contact us for engineering samples and app notes.
* The P2P regulator circuit is patent pending.
** Although safe to drive Vg from -20 to 20V, the current version of P2P-GaN generates some heat loss when Vg is high. Best to limit the Vg to be below 10V if possible.
About GanPower International Inc.
GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.
