GaNPower is pleased to report that recent dynamic testing of its 900V/120A (12mOhm) power switch shows great promise against similar SiC for high power/current applications. A common parameter for application engineer to compare is the switching loss at turn off (Eoff).  A small  Eoff is a good indication of low switching loss without concern of Electromagnetic interference (EMI) in power systems.   In similar conditions of about 400V/100A switching, GaNPower’s Star120 Eoff (in TO247-4) is less than 1/2 of that of SiC (see table below).  This Eoff can be further lowered with driver optimization.  On a separate positive note, we have successfully demonstrated driving 6 Star120 in parallel generating 360A or above  amount of current.  

Features of Star120 all-GaN-IC power switch:

GaNPower innovative all-GaN-IC enables 3.8V turn-on voltage and  +/-20 V regulated gate driving.   Enhanced system reliability and compatibility with conventional  gate drivers. Regulated gate driving enables anti-ringing protection / ESD protection . Lossless source side current sensing.

DUT	Transient	Ton/off (ns)	Trise/fall (ns)	Ton/off (ns)	Eoff (uJ)	Load
Star120 Vg=-3.3/12 Rg=2 Ohm	Turn-off	25	13	37	157	400V 99A
IMZA65R010M2H Vg=0/18 Rg=3.3 Ohm From DS	Turn-off	30	9	39	371	400V 92A