23
May
The Release of Upgraded 1200V E-Mode GaN Device
in Trends
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GaNPower is pleased to announce the release of an upgraded version of its 1200V emode GaN packaged as TO247-4. At a turn on voltage of Vgth=2.7, this GaN switch is suitable for gate driving range of -2 to 12 (max range -20 to 20). At 34 mOhm and maximum current rating of 40A, this product shows stable dynamic on-resistance above 800V. The upgraded current capability to 40A makes it well-suited for applications above 700V, such as 800V+ onboard chargers (OBC) and high-density DC-DC converters stepping down to lower bus voltages.
Here’s the illustration of the waveform of double pulse testing :
