New 900V GaN-IC devices
GaNPower International is pleased to announce the release of two kinds of engineering GaN-IC at 900V and Rdson 85mOhm. They are suitable for DC bus ranging from 400-600V power switching operation.
They offer lower dynamic Rdson than discrete GaNFET and untra-low quiescent leakage current. The IC markings are GPI4TIC15DFV and GPI6TIC15DFV. Details can be found in the product page.
About GanPower International Inc.
GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable future requires a responsible energy conversion solution and GaN material based power electronics holds the key to such a solution. The company mission is to provide world class products of GaN devices, GaN based power ICs and GaN related power system solutions for a greener future.
