GaNPower International is pleased to announce the release of two new GaNPower IC (GPI8HINOIC and GPI8HIRGIC) that were specially designed for high-side power switches in a half-bridge application. Using edge-triggered narrow pulses as input signal, these two IC enables the use of small and inexpensive transformer for isolation and level shifting for the high side switch. Such GaNPower IC eliminate the major cost of...

GaNPower International Inc. will be attending 2019 IEEE Energy Conversion Congress & Expo, Baltimore, Sept. 29-Oct.3. We will showcase new products such as new 1200V GaNFET, 650V All-GaN Power IC as well as new Silicon driver-GaN co-packaged IC. Please come visit us at booth 314. About GaNPower International Inc. GanPower International Inc. is a Canadian federal corporation based in Vancouver, Canada with a focus on...

GaNPower International Inc. is pleased to announce that it has successfully designed its first GaN FET monolithically integrated with a gate driver. The power IC is rated at 650V with nominal resistance of 0.18mOhm. Engineering samples are now available in package of SOP8 (5x8) and the same IC is being transferred to DFN5x6 for better thermal performance. Some brief...