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09 Sep

Breakthrough on Over-Voltage Protection GaN IC

[vc_row][vc_column][vc_column_text]Ganpower International (GPI) is pleased to announce a major technical breakthrough: the successful design and tapeout of a power GaN device monolithically integrated with a gate over-voltage protection (patent-pending) circuit. The integrated GaN power device includes an IC module with functionality of over-voltage protection and level shifting and it shall be named OVP-GaN (or over-voltage protected GaN).[/vc_column_text][vc_empty_space height="30px"][qodef_blockquote text="We believe the invention holds the key...

23 Aug

Half-bridge evaluation board

by admin

in Technology

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GaNPower’s half-bridge evaluation board GPIEVBOPT uses separate isolated optocoupler and auxiliary DC power supply for both high and low sides. It enables users of GaNFET to investigate the optimal driving parameters without the worry of bootstrap circuit interfering with high side driving. The EVB can be conveniently converted to double pulse testing board and it is designed to withstand a maximum bus voltage of 1000V....

02 Aug

A major breakthrough: 1200V E-Mode GaN HEMTs

by admin

in Trends

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