GaNPower is pleased to announce the availability of a new evaluation board of 5kW 3-phase inverter power stage. The inverter will be showcased at 2023 APEC in Orlando. Please come visit us at APEC exhibition. ...
Read MoreGaNPower International (GPI) is pleased to announce the release of a new GaNPowerIC: GPIRG15DFV. Rated at 85mOhm/900V, this all-GaN IC is suitable for 400V or 600V DC bus power switching.This power IC monolithically integrates a fast GaN based driver with an easy-to-use regulated PWM input and auxiliary power supply. Common Emode GaNFET or IC is known to have the disadvantage of small gate voltage (6-7V)...
Read MoreGaNPower International is pleased to announce the release of two kinds of engineering GaN-IC at 900V and Rdson 85mOhm. They are suitable for DC bus ranging from 400-600V power switching operation.They offer lower dynamic Rdson than discrete GaNFET and untra-low quiescent leakage current. The IC markings are GPI4TIC15DFV and GPI6TIC15DFV. Details can be found in the product page. About GanPower International Inc. GanPower International Inc. is a...
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Join the GaNPower experts in power electronics for the industrial markets at the in-person IEEE Energy Conversion Congress & Expo Huntington Place, Detroit, MI Oct 9-13, 2022 at booth #402. Subject matter experts will be presenting in Special Session 17 Room 142A/B at the conference, and our team will be available to discuss and demonstrate cutting edge technologies. Title: Monolithic integration of highside driver with GaN power switches Contributors: Simon Li(*),...
Read MoreWe are pleased to release the latest app note on 3-phase utility meter power using GaNPower 1200V GaNFET. Details Can be found Here. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that a sustainable...
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GaNPower International (GPI) is pleased to attend the exhibition (Booth 1839) at the Applied Power Electronics Conference (APEC) March 20-24, Houston, TX.We would like to take the opportunity of the APEC22 to release a new appnote of high voltage GaN for smart utility meters.As pioneer in high voltage single die emode GaNFET, GPI is pleased to report greater than 90 percent power efficiency for application...
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GaNPower International Inc. is pleased to release a half-bridge evaluation board GPIEVBHBOPT. GaNPower’s half-bridge evaluation board GPIEVBOPT uses separate isolated optocoupler and auxiliary DC power supply for both high and low sides. It enables users of GaNFET to investigate the optimal driving parameters without the worry of bootstrap circuit interfering with high side driving. The EVB can be conveniently converted to double pulse testing board and it...
Read MoreNew 1200V GaNFET Power Switching Capability Demonstrated at 800V Sept., 2021— GaN Power International, an industry leader in gallium nitride (GaN) device technology and GaN based power electronics systems, has achieved an important milestone in the development of high-voltage GaN power devices. After introducing its first lateral EMODE GaN power transistor in 2018(*), it has recently demonstrated the power switching capability in a double pulse testing...
Read MoreWe at GaNPower Intl are pleased to announce that our US patent application entitled "Packaging for Lateral High Voltage GaN Power Devices," has been allowed by the US Patent Office. The patent allowance encourages us to further qualify and market our unique single-die emode 1200V GaN as replacement for SiC at 1200V. The figure of merit Qq*Rdson for our 1200V GaN is about 10 times...
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