GaNPower International (GPI) is pleased to attend the exhibition (Booth 1839) at the Applied Power Electronics Conference (APEC) March 20-24, Houston, TX.We would like to take the opportunity of the APEC22 to release a new appnote of high voltage GaN for smart utility meters.As pioneer in high voltage single die emode GaNFET, GPI is pleased to report greater than 90 percent power efficiency for application...
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GaNPower International Inc. is pleased to release a half-bridge evaluation board GPIEVBHBOPT. GaNPower’s half-bridge evaluation board GPIEVBOPT uses separate isolated optocoupler and auxiliary DC power supply for both high and low sides. It enables users of GaNFET to investigate the optimal driving parameters without the worry of bootstrap circuit interfering with high side driving. The EVB can be conveniently converted to double pulse testing board and it...
Read MoreNew 1200V GaNFET Power Switching Capability Demonstrated at 800V Sept., 2021— GaN Power International, an industry leader in gallium nitride (GaN) device technology and GaN based power electronics systems, has achieved an important milestone in the development of high-voltage GaN power devices. After introducing its first lateral EMODE GaN power transistor in 2018(*), it has recently demonstrated the power switching capability in a double pulse testing...
Read MoreWe at GaNPower Intl are pleased to announce that our US patent application entitled "Packaging for Lateral High Voltage GaN Power Devices," has been allowed by the US Patent Office. The patent allowance encourages us to further qualify and market our unique single-die emode 1200V GaN as replacement for SiC at 1200V. The figure of merit Qq*Rdson for our 1200V GaN is about 10 times...
Read MoreGaNPower International Inc. is pleased to announce its continued successin GaN technology innovation with a number of device and packagingrelated patents being allowed and/or issued by the US patent office.Details are available in the table here. ...
Read MoreGaNPower International Inc. is pleased to announce the release of 1200V EMODE single-die GaNFET in its first DFN8x8 format at the engineering sampling stage. The new product (code GPIHV30DFN) features low Qg*Rds at 65mOhm turn-on resistance. With a S-D creepage of 2.8mm, it is suitable for switching at about 800V, leaving sufficient safety margin for BV. More details are available on...
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GaNPower is pleased to anounce that we will attend this year’s Applied Power Electronics Conference (APEC 20) to be held in New Orleans, LA. Applied Power Electronics Conference is held every year in difference cities in the US and it draws thousands of experts in power electronics from all over the world. We would like to take this opportunity to meet old and new friends, so come...
Read MoreGaNPower International is pleased to announce joining the JEDEC JC-70 Committee starting from 2020. By joining JEDEC, GaNPower International determines to follow JEDEC reliability and qualification procedures for its discrete devices and GaNPowerICTM as well as to help develop further standards for GaN power semiconductors. About GaNPower International GanPower International Inc. is a Canadian federal corporation based in Vancouver, Canada with a focus on developing...
Read MoreGaNPower International is pleased to announce the release of two new GaNPower IC (GPI8HINOIC and GPI8HIRGIC) that were specially designed for high-side power switches in a half-bridge application. Using edge-triggered narrow pulses as input signal, these two IC enables the use of small and inexpensive transformer for isolation and level shifting for the high side switch. Such GaNPower IC eliminate the major cost of...
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