logo

Select Sidearea

Populate the sidearea with useful widgets. It’s simple to add images, categories, latest post, social media icon links, tag clouds, and more.
hello@youremail.com
+1234567890

Author: admin

GaNPower International Inc. will be attending 2019 IEEE Energy Conversion Congress & Expo, Baltimore, Sept. 29-Oct.3. We will showcase new products such as new 1200V GaNFET, 650V All-GaN Power IC as well as new Silicon driver-GaN co-packaged IC. Please come visit us at booth 314. About GaNPower International Inc. GanPower International Inc. is a Canadian federal corporation based in Vancouver, Canada with a focus on...

Read More

GaNPower International Inc. is proud to announce the release of a new high performance 1200V GaN power switching device (product code GPIHV30DDP5L). In a TO263-5 package, the 60 mOhm/30A device features Kevin source lead and small input capacitance. With unique proprietary design the new device can switch 10 times faster (or 1/10th of input capacitance) than its SiC counterparts. Engineering samples...

Read More

GaNPower International Inc. is pleased to announce that it has successfully designed its first GaN FET monolithically integrated with a gate driver. The power IC is rated at 650V with nominal resistance of 0.18mOhm. Engineering samples are now available in package of SOP8 (5x8) and the same IC is being transferred to DFN5x6 for better thermal performance. Some brief...

Read More