Using innovative all-GaN-IC e-mode GaN technology, GaNPower is pleased to release a series of e-mode GaN that is pin-to-pin compatible with power MOSFET. It has turn-on voltage of about 2.6V-2.8V and gate driving range up to 20V (recommended 12V). The package is such that the center tab is the drain electrode to be compatible with MOSFET convention. With competitive pricing and much higher performance, this...

GaNPower is pleased to announce a series of high performance half-bridge power IC based on e-mode GaN integrated with all-GaN-IC and SiP. The first of this series is GP70R25HBIC15 , a 700V/25mΩ GaN-on-Si enhancement-mode power transistor packaged in half-bridge with driver IC included in the form of SiP and all-GaN-IC. Packaged in QFN15x13, the integration of half bridge driver makes it a high performance signal-in/power-out...

GaNPower International is pleased to inform that to continue our success in GaN power device design, our wafer fabrication has been transferred from TSMC to other well established foundries around the world, including Global Foundry....

GaNPower is pleased to demonstrate (engineering stage) of 1200V/25mOhm/60A EMODE GaNFET power switch based on all-GaN-IC and smart packaging. Protected by multiple patents (some pending), the technology enables EMODE GaN/Si from 650V platform be transformed to 1200V and beyond. The GaN device shows good DC parameters and excellent dynamic switching behavior with small increase in dynamic RDSON up to 960V (see figure below). Packaged in TO247-4, its...

GaNPower is pleased to report that recent dynamic testing of its 900V/120A (12mOhm) power switch shows great promise against similar SiC for high power/current applications. A common parameter for application engineer to compare is the switching loss at turn off (Eoff).  A small  Eoff is a good indication of low switching loss without concern of Electromagnetic interference (EMI) in power systems.   In similar conditions of...

by Tektronix Advanced Semiconductor Laboratory To more thoroughly assess the aging characteristics of power devices, high-temperature operating life (HTOL) tests have increasingly gained attention from power device test engineers. HTOL replicates the operational conditions of power devices by integrating them into actual power circuits. By subjecting devices to stress through continuous hard or soft switching circuits, HTOL delivers aging effects that closely mimic real-world usage, providing...

GaNPower is pleased to announce the release of an upgraded version of its 1200V emode GaN packaged as TO247-4. At a turn on voltage of Vgth=2.7, this GaN switch is suitable for gate driving range of -2 to 12 (max range -20 to 20). At 34 mOhm and maximum current rating of 40A, this product shows stable dynamic on-resistance above 800V. The upgraded current capability...

GaNPower is pleased to announce the successful demonstration of parallelization capability of Bluesky120 (bare die of EMODE GaNFET/IC with rating of 900V/120A/12mOhm) packaged in a TO247-4.Driving conditions are compatible with conventional driving voltages. At Vbus-400V, a maximum of 335A switching current has been achieved with driving voltage -1V to 12V (see example waveform here). About GanPower International Inc. GanPower is a Vancouver, Canada based private company with...

We are pleased to offer a new bare die at 900V 120A/12 mOhm rating. Full chip probe has been performed and results have been included. Details can be found here. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group...

In August this year, GaNPower introduced a new generation of high-voltage GaN devices with rated operating conditions of 1200V/20A (70mΩ) and an output current exceeding 20A at a gate voltage of 12V. This performance improvement makes GaNPower's GaN devices comparable to silicon carbide (SiC) devices of the same specifications in terms of operating performance. Details can be found here. About GanPower International Inc. GanPower International Inc. is...

GaNPower recently released its 60A and 120A bare die series [link_to_product_page] GaNFET and GaN-IC at a voltage rating of 650V/900V, which includes options to drive the Emode GaNFET at the original gate voltage of 6V [G0(6V)] or 12/15V [G1(15V)].  Please see here for the details. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing...

We are pleased to announce the release of an upgraded version of EMODE GaNFET (GP65R45T4) which features an enhanced gate turn-on voltage (4V) and increased gate driving range (+/-20V). Using All-GaN-IC technology, the new device makes it easy to replace exising SJ MOFET and SiC in a pin-to-pin manner. For details, please see the following app note. About GanPower International Inc. GanPower International Inc. is a privately...

1200V GaNFET GaNPower recently demonstrates good dynamic switching performance for a wide temperature range and voltage range 25-125C, from Vbus=100-1200V, at a switching current of 20A. Details are here. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of...

We at GaNPower are pleased to announce the release of a new class of engineering samples of high voltage (nominal 650V and 1200V) GaN power switches based on the TO247-4 package. Up to a maximum rated current of 120A (12 mOhm), some of these switches include driver IC intended to be driven by digital signal while others include a monolithically integrated input regulator circuit*. The...

We are pleased to announce that Ganpower International Inc.’s proposal for the IRAP project titled “GSense Lossless in-line current sensing for all-GaN-IC Intelligent Power Modules” has been approved for support under the National Research Council Canada’s Industrial Research Assistance Program (NRC IRAP). About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride...

GaNPower is pleased to inform that after rigorous qualification procedures its GaNFETs are being used in various types of PD quick chargers for Samsung smartphones. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada with a focus on developing gallium nitride (GaN) based technology in power electronics. It was established by a group of professionals who believe that...

GaNPower is pleased to release GaN power switch with an integrated lossless current sensing element. With unique all-GaN-IC based current sensing technology, both positive and negative current sensing can be achieved. The device may be regarded as a discrete FET with integrated sensing circuit, or be regarded as belonging to the family of GaN-IC with monolithic subcircuit integration. The power switch is packaged in DFN8x8...

GaNPower is pleased to inform that after disruption for a period of three years due to fab capacity issues, we are able to restock the hiside GaN-IC. Our hiside IC used edge trigger method and a pair of signal transformers to offer easy level shifting when using monolithic GaN-IC. About GanPower International Inc. GanPower International Inc. is a privately held Canadian federal corporation based in Vancouver, Canada...

GaNPower is pleased to announce the availability of a new evaluation board of 5kW 3-phase inverter power stage. The inverter will be showcased at 2023 APEC in Orlando. Please come visit us at APEC exhibition. ...

GaNPower International (GPI) is pleased to announce the release of a new GaNPowerIC: GPIRG15DFV. Rated at 85mOhm/900V, this all-GaN IC is suitable for 400V or 600V DC bus power switching.This power IC monolithically integrates a fast GaN based driver with an easy-to-use regulated PWM input and auxiliary power supply. Common Emode GaNFET or IC is known to have the disadvantage of small gate voltage (6-7V)...