GaNPower is pleased to demonstrate (engineering stage) of 1200V/25mOhm/60A EMODE GaNFET power switch based on all-GaN-IC and smart packaging. Protected by multiple patents (some pending), the technology enables EMODE GaN/Si from 650V platform be transformed to 1200V and beyond.

The GaN device shows good DC parameters and excellent dynamic switching behavior with small increase in dynamic RDSON up to 960V (see figure below).

Packaged in TO247-4, its static IDSS is less than 10uA at 1200V while VGTH at 2.7V.  The gate includes an  regulator (all-GaN-IC) enabling -5/20V wide range switching.  Typical value of RDSON is rated at 25mOhm (at 25C)  with maximum current rating of 60A (at 125C). Limited samples are available for selected customers (please contact information@iganpower.com).