Using innovative all-GaN-IC e-mode GaN technology, GaNPower is pleased to release a series of e-mode GaN that is pin-to-pin compatible with power MOSFET. It has turn-on voltage of about 2.6V-2.8V and gate driving range up to 20V (recommended 12V). The package is such that the center tab is the drain electrode to be compatible with MOSFET convention. With competitive pricing and much higher performance, this series of GaN switch can replace existing MOSFET with no change in circuit design and little or no extra cost. For more details, please check our datasheets for GP70R140T2P and GP70R250T2P on the product page.