GaNPower International is pleased to announce the successful development of its Generation-II P2P™ (Pin-to-Pin Compatible) GaN technology, representing a major milestone toward replacing conventional IGBTs in next-generation power electronics. The new platform delivers a significantly higher effective gate turn-on voltage, improved gate-drive compatibility, faster switching performance, lower gate leakage, and enhanced system robustness for industrial, automotive, renewable energy, AI power supply, and other high-performance power conversion applications.

For more details, please see the attached announcement here.