GaNPower is pleased to announce a series of high performance half-bridge power IC based on e-mode GaN integrated with all-GaN-IC and SiP. The first of this series is GP70R25HBIC15 , a 700V/25mΩ GaN-on-Si enhancement-mode power transistor packaged in half-bridge with driver IC included in the form of SiP and all-GaN-IC. Packaged in QFN15x13, the integration of half bridge driver makes it a high performance signal-in/power-out power stage convenient in many high power applications such as motor drivers and battery chargers. For details, check out the datasheet on our product page here.